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proprietary and confidential a microchip technology company ?2011 silicon storage technology, inc. ds75040a 12/11 data sheet www.microchip.com features ? gain: ? typically 12 db gain across 2.4?2.5 ghz for receiver (rx) chain. ? typically 29 db gain across 2.4?2.5 ghz over temperature 0c to +80c for transmitter (tx) chain. ? low-noise figure ? typical 1.45 db across 2.4?2.55 ghz ?50 ? input/output matched along rx chain. ? rx iip3 ? >1 dbm across 2.4?2.55 ghz ? high linear output power: ? >26.5 dbm p1db ? meets 802.11g ofdm acpr requirement up to 23 dbm ? ~3% added evm up to 19 dbm for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 24 dbm ? high power-added efficiency/low operating cur- rent for both 802.11g/b applications ? ~22%/210 ma @ p out = 22 dbm for 802.11g ? ~26%/240 ma @ p out = 23.5 dbm for 802.11b ? low idle current ? ~70 ma i cq ? low shut-down current (typical 2.5 a) ? built-in, ultra-low i ref power-up/down control ?i ref <4 ma ? high-speed power-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? ~1 db gain/power variation between 0c to +85c ? simple input/output matching ? single positive power supply ? packages available ? 24-contact wqfn ? 4mm x 4mm ? all devices are rohs compliant applications ? wlan ? bluetooth ? wireless network 2.4 ghz front-end module sst12lf01 the sst12lf01 is a 2.4 ghz front-end module (fem) that combines a high-per-formance low-noise amplifier (lna) and a power amplifier (pa). designed in compliance with ieee 802.11 b/g/n applications and based on gaas phemt/hbt technology, the sst12lf01 operates within the frequency range of 2.4- 2.55 ghz at a very low dc-current consumption. the transmitter chain has excellent linear- ity, typically <3% added evm up to 19 dbm output power, which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dbm. the sst12lf01 is offered in a 24-contact wqfn package. downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 2 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company product description the sst12lf01 is a 2.4 ghz front-end module (fem) that combines a high-performance low-noise amplifier (lna) and a power amplifier (pa). designed in compliance with ieee 802.11 b/g/n applications and based on gaas phemt/hbt tech- nology, the sst12lf01 operates within the frequency range of 2.4?2.55 ghz at a very low dc-current consumption. there are two components to the fem: the receiver (rx) chain and the transmitter (tx) chain. the rx chain consist of a cost effective low-noise amplifier (lna) cell which requires no external rf- matching components. this device is based on the 0.5m gaas phemt technology, and complies with 802.11 b/g/n applications. the lna provides high-performance, low-noise, and moderate gain operation within the 2.4?2.55 ghz frequency band. across this frequency band, the lna typically provides 12 db gain and 1.45 db noise figure. this lna cell is designed with a self dc-biasing scheme, which maintains low dc current consump- tion, nominally at 11 ma, during operation. optimum performance is achieved with only a single power supply and no external bias resistors or networks are required. the input and output ports are singled- ended 50 ohm matched. rf ports are also dc isolated requiring no dc blocking capacitors or match- ing components to reduce system board bill of materials (bom) cost. the tx chain includes a high-efficiency pa based on ingap/gaas hbt technology. the pa typically provides 30 db gain with 22% power-added efficiency at p out = 22 dbm for 802.11g and 27% power- added efficiency at p out = 24 dbm for 802.11b. the transmitter chain has excellent linearity, typically <4% added evm up to 20 dbm output power, which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dbm. the sst12lf01 is offered in 24-contact wqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 3 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company functional blocks figure 1: functional block diagram 25 6 8 1615 1 14 4 91 1 1 2 10 13 3 7 17 18 19 20 21 22 23 24 1330 b1.1 lna pa dc block dc block downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 4 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company pin assignments figure 2: pin assignments for 24-contact wqfn 25 6 8 1615 1 14 4 91 1 1 2 10 13 v ref nc v ccb nc nc v dd _rx 3 nc lna in nc 7 1330 p1.1 17 18 19 20 21 22 23 24 top view (contacts facing down) rf and dc gnd 0 pa out v cc _tx2 lna out pa in nc v cc _tx1 nc nc nc ncnc ncnc nc pa out downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 5 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function lna in 1 i lna rf input nc 2 no connection unconnected pin nc 3 no connection unconnected pin pa out 4 o pa rf output pa out 5 o pa rf output v cc _tx2 6 power supply pwr pa power supply, 2 nd stage nc 7 no connection unconnected pin nc 8 no connection unconnected pin v cc _tx1 9 power supply pwr pa power supply,1 st stage v ref 10 pwr pa-enable and current control v ccb 11 power supply pwr pa power supply, bias circuit nc 12 no connection unconnected pin nc 13 no connection unconnected pin pa in 14 i pa rf input nc 15 no connection unconnected pin nc 16 no connection unconnected pin nc 17 no connection unconnected pin lna out 18 o lna rf output nc 19 no connection unconnected pin nc 20 no connection unconnected pin nc 21 no connection unconnected pin v dd _rx 22 power supply pwr lna power supply nc 23 no connection unconnected pin nc 24 no connection unconnected pin t1.0 75040 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 6 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 3 for the dc voltage and current specifications. refer to figures 3 through 14 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) input power to pins 1 (lna) .................................................... 0dbm input power to pins 14 (pa) ....................................................-5dbm average output power pins 4 and 5 (p out ) 1 ...................................... 24dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the max- imum rating of average output power could cause permanent damage to the device. average output power pin 18 (p out ) 1 ............................................ 9dbm supply voltage at pins 6, 9, and 11 (v cc )................................... -0.3v to +4.6v supply voltage at pin 22 (v dd ) ........................................... -0.3v to +4.6v reference voltage to pin 10 (v ref )........................................ -0.3v to +3.6v dc supply current to pin 10 (i dd )................................................ 14ma dc supply current to pin 6, 9, and 11 (i cc ) ....................................... 300ma operating temperature (t a ) ............................................ -40oc to +85oc storage temperature (t stg )........................................... -40oc to +120oc maximum junction temperature (t j ) ........................................... +150oc surface mount solder reflow temperature ........................... 260c for 10 seconds table 2: operating range range ambient temp v cc /v dd commercial -0 to 80oc 2.9?4.2v t2.1 75040 table 3: dc electrical characteristics symbol parameter min. typ max. unit v cc supply voltage at pins 6, 9, 11, and 22 3.3 4.2 v i cc supply current at pin 22 10 ma for 802.11g, 22 dbm at pins 6, 9, and 11 210 ma for 802.11b, 23.5 dbm at pins 6, 9, and 11 260 ma i cq idle current for 802.11g to meet evm<4% @ 20 dbm 75 ma i off shut down current 2.5 a v ref 1 1. v ref and v reg are defined in figure 15. three combinations of resistor values and applied voltages of v reg are sug- gested in table 3. reference voltage at pin10 with r reg =0 ? resistor 2.7 v reference voltage at pin 10 with r reg = 120 ? resistor 2.7 2.9 3.1 v reference voltage at pin 10 with r reg = 220 ? resistor 2.9 3.1 3.3 v t3.1 75040 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 7 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company table 4: ac electrical characteristics for rx chain symbol parameter min. typ max. unit f l-u frequency range 2400 2550 mhz g small signal gain 10 12 db nf noise figure 1.45 db iip3 2.4?2.55 ghz 1 3 dbm t4.1 75040 table 5: ac electrical characteristics for tx chain symbol parameter min. typ max. unit f l-u frequency range 2400 2485 mhz p out output power @ pin = -6 dbm 11b signals 23 dbm @ pin = -9 dbm 11g signals 20 dbm g small signal gain 28 29 33 db g var1 gain variation over band (2400~2485 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 23 dbm meet 11g ofdm 54 mbps spectrum mask 22 dbm added evm @ 20 dbm output with 11g ofdm 54 mbps signal 4 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without external filters -40 dbc t5.1 75040 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 8 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company typical performance characteristics test conditions: v dd = 3.0v, t a = 25c, unless otherwise specified figure 3: s-parameters, rx chain frequency (ghz) frequency (ghz) s11 versus frequency s12 versus frequency s22 versus frequency s21 versus frequency 1330-sparm1.3 frequency (ghz) -40 -30 -20 -10 0 10 20 01234567891 0 frequency (ghz) s11 (db) -60 -50 -40 -30 -20 -10 0 10 20 024681 0 s12 (db) 13579 s21 (db) -40 -35 -30 -25 -20 -15 -10 -5 0 024681 0 s22 (db) 13579 -50 -40 -30 -20 -10 0 10 20 01234567891 0 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 9 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company figure 4: noise figure versus frequency, rx chain frequency (ghz) 1330 f8.1 0 0.5 1.0 1.5 2.0 2.5 3.0 1.5 2.0 2.5 3.0 frequency (ghz) noise figure (db) temp = -10 degree temp = 25 degree temp = 80 degree downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 10 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company figure 5: frequency response of gain (s21) over three temperatures 1330 f12.1 -15 -10 -5 0 5 10 15 20 1234 fre que ncy (g hz ) gain (db) te m p = - 1 0 d e g r e e room temp te m p = 8 0 d e g r e e downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 11 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company figure 6: input ip3 versus frequency, rx chain 0 1 2 3 4 5 6 7 8 9 10 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 frequency (ghz) iip3 (dbm) vdd=3.3v vdd=3.0v vdd=3.6v 1330 f9.1 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 12 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company figure 7: input p1db versus frequency, rx chain 1330 f10.1 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 2 2.2 2.4 2.6 2.8 3 frequency (ghz) ip1db (dbm) vdd = 3.3 vdd = 3.0 vdd = 3.6 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 13 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company test conditions: v cc = 3.3v, t a = 25c, unless otherwise specified figure 8: s-parameters, tx chain -1 2 .0 0 -1 0 .0 0 -8 .0 0 -6 .0 0 -4 .0 0 -2 .0 0 0.00 2.00 0.0 2.0 4.0 6.0 8.0 10.0 12.0 fre que ncy (ghz ) s11 (db) -60.00 -5 0 .0 0 -40.00 -3 0 .0 0 -2 0 .0 0 -1 0 .0 0 0.00 10.00 20.00 30.00 40.00 0.0 2.0 4.0 6.0 8.0 10.0 12.0 fre que ncy (ghz ) s21 (db) -100.00 -90.00 -80.00 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 0.0 2.0 4.0 6.0 8.0 10.0 12.0 fre que ncy ( g hz ) s21 (db) -9.00 -8.00 -7.00 -6.00 -5.00 -4.00 -3.00 -2.00 -1.00 0.00 0.0 2.0 4.0 6.0 8.0 10.0 12.0 fre que ncy ( g hz ) s22 (db) 1330 sparm2-1.1 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 14 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company typical performance characteristics test conditions: f = 2.447 ghz, v cc = 3.3v, v ref = 2.85v at room temperature i cq =70ma figure 9: supply current versus output power figure 10: power added efficiency (pae) versus output power 1330 f1.1 supply current versus output power 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 output power (dbm) supply current (ma) freq = 2.412 ghzfreq = 2.447 ghz freq = 2.484 ghz 1330 f2.1 pae versus output power 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 9 1 01 11 21 31 41 51 61 71 81 92 02 12 22 32 4 output power (dbm) pae (%) freq = 2.412 ghz freq = 2.447 ghz freq = 2.484 ghz downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 15 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company figure 11: evm versus output power, measured with equalizer channel estimation set to ?sequence plus data? figure 12: power gain versus output power evm versus output power 0 1 2 3 4 5 6 7 8 9 10 9 1 01 11 21 31 41 51 61 71 81 92 02 12 22 32 4 output power (dbm) evm (%) freq=2.412 ghz freq=2.447 ghz freq=2.484 ghz 1330 f3.3 power gain versus output power 20 22 24 26 28 30 32 34 36 38 40 9 1 01 11 21 31 41 51 61 71 81 92 02 12 22 32 4 output power (dbm) power gain (db) freq=2.412 ghz freq=2.447 ghz freq=2.484 ghz 1330 f11.0 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 16 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company test conditions: v cc = 3.3v, t a = 25c, 54 mbps 802.11g ofdm signal figure 13: 802.11g spectrum mask at 23 dbm test conditions: v cc = 3.3v, t a = 25c, 1 mbps 802.11b signal figure 14: 802.11b spectrum mask at 23 dbm -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 frequency (ghz) amplitude (db) freq = 2.412 ghz freq = 2.442 ghz freq = 2.484 ghz 1330 f4.0 1330 f5.0 -80 -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 frequency (ghz) amplitude (db) freq = 2.412 ghz freq = 2.442 ghz freq = 2.484 ghz downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 17 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company figure 15: typical schematic 25 6 8 1615 1 14 4 91 1 1 2 10 13 3 7 1330 schematic1.2 17 18 19 20 21 22 23 24 lna rf in pa r f out 50 / 146 mil 1.6 pf 0.1 f 50 / 113 mil 50 47 pf pa v cc pa r f in lna rf out lna v dd 0.82 pf 12 nh 1 f 0.1 f 0.1 f 50 v reg 0 0.1 f 100 pf 50 47 pf dc block dc block v ref i reg downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 18 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company product ordering information valid combinations for sst12lf01 sst12lf01 -qdf sst12lf01 evaluation kits sst12lf01 -qdf-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combi- nations. sst 12 lf 01 - qdf xx xx xx - xxx environmental attribute f 1 = non-pb contact (lead) finish package modifier d = 24 contact package type q = wqfn product family identifier product type f = front end module voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf products 1. environmental suffix ?f? denotes non-pb sol- der. sst non-pb solder devices are ?rohs compliant?. downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 19 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company packaging diagrams figure 16: 24-contact very-very-thin quad flat no-lead (wqfn) sst package code: qd note: 1. complies with jedec jep95 mo-220j, variant wggd-4 except external paddle dimensions. 2. from the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 24-wqfn-4x4-qd-2.0 2.3 0.5 bsc see notes 2 and 3 pin 1 0.300.18 0.075 2.3 0.2 4.00 0.05 max 0.450.35 0.800.70 pin 1 top view bottom view side view 1mm 0.08 4.00 0.08 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 20 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company table 6: revision history revision description date 00 ? initial release of data sheet sep 2006 01 ? updated pins 9 and 11 in figure 2 on page 4 ? updated pin 6, 9, and 11 in table 1 on page 5 ? updated figure 11 on page 15 ? updated figure 15 on page 17 jan 2007 02 ? updated ?product ordering information? on page 18 sep 2007 03 ? revised product description on page 1 ? changed signal gain value14 db globally ? changed low-noise figure to 1.45 db globally ? edited high temperature stability feature, page 1 ? change low idle current to 75 ma, page 1 ? edited table 2, dc electrical characteristics; table 3, ac electrical characteristics rx chain; table 4, ac electrical characteristics tx chain ? replaced figures 3 through 11 with up-to-date graphs on pages 7 through 13 ? added figure 5 on page 8 ? added figure 12 on page 15 ? edited figure 15 on page 17 jun 2008 04 ? revised rx chain gain value from 14 to 12 in ?features? and ?product description? on page 2 and table 4 on page 7. ? updated figures 3 and 5. nov 2008 05 ? updated contact information feb 2009 06 ? updated document status to ?data sheet? ? revised iipe values in features on page 1 and table 4 on page 7 ? changed definition of ?f? environmental attribute in ?product ordering information? on page 18 nov 2010 a ? removed products with an ?e? environmental attribute from ?product ordering information? on page 18 ? revised figure 1 on page 3 and the caption of ? applied new document format ? released document under letter revision system ? updated spec number from s71330 to ds75040 dec 2011 downloaded from: http:///
proprietary and confidential ?2011 silicon storage technology, inc. ds75040a 12/11 21 2.4 ghz front-end module sst12lf01 data sheet a microchip technology company ? 2011 silicon storage technology, inc?a microchip technology company. all rights reserved. sst, silicon storage technology, the sst logo, superflash, mtp, and flashflex are registered trademarks of silicon storage tech- nology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for the most recent documentation. for the most current package drawings, please see the packaging specification located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity; actual usable capacity may be less. sst makes no warranty for the use of its products other than those expressly contained in the standard terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-61341-864-2 downloaded from: http:///

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